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Si4470EY
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
V GS(th)
I GSS
I DSS
I D(on)
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
V DS = 48 V, V GS = 0 V
V DS = 48 V, V GS = 0 V, T J = 55 °C
V DS ?? 5 V, V GS = 10 V
2.0
50
± 100
1
5
V
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 12 A
V GS = 6.0 V, I D = 10 A
V DS = 15 V, I D = 10 A
0.009
0.0105
50
0.011
0.013
?
S
Diode Forward Voltage
a
V SD
I S = 3.0 A, V GS = 0 V
0.75
1.2
V
Dynamic b
Total Gate Charge
Q g
46
70
Gate-Source Charge
Gate-Drain Charge
Q gs
Q gd
V DS = 30 V, V GS = 10 V, I D = 12 A
11.5
11.5
nC
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
R g
t d(on)
t r
t d(off)
t f
t rr
V DD = 30 V, R L = 30 ?
I D ? 1.0 A, V GEN = 10 V, R g = 6 ?
I F = 3.0 A, dI/dt = 100 A/μs
0.25
0.85
16
12
50
30
40
1.4
25
18
75
45
60
?
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
40
30
20
V GS = 10 V thru 5 V
50
40
30
20
T C = 125 °C
10
0
2 V, 3 V
4V
10
0
25 °C
- 55 °C
0
2
4
6
8
10
0
1
2
3
4
5
6
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 71606
S10-2137-Rev. D, 20-Sep-10
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